Knoxville, TN, United States of America

Gary W Ownby

This inventor holds 1 USPTO granted patent. Top assignee: The United States of America as Represented by the United States. Active years: 1981.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Gary W Ownby. Retrieved from https://idiyas.com/inventor/gary-w-ownby

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

Average Co-Inventor Count = 3.0

ph-index = 1

Forward Citations = 48(Granted Patents)


Company Filing History:


Years Active: 1981

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1 patent (USPTO):Explore Patents

Title: Innovations of Gary W. Ownby

Introduction

Gary W. Ownby is a notable inventor based in Knoxville, TN (US). He has made significant contributions to the field of materials science, particularly in the area of semiconductor processing. His innovative approach to removing surface impurities has the potential to enhance the performance of electronic devices.

Latest Patents

Gary W. Ownby holds a patent for a method using laser irradiation for the production of atomically clean surfaces. This invention focuses on a new technique for eliminating surface contaminants from crystalline silicon or germanium articles, such as p- or n-type wafers. The principal contaminants targeted by this method are oxygen and carbon. The process involves laser-irradiating the contaminated surface in a non-reactive atmosphere, utilizing Q-switched laser pulses. These pulses are carefully selected to melt the surface without significant vaporization. In typical applications, multiple pulses are employed to convert a contaminated silicon wafer surface into an atomically clean region. This method can be executed in a system operating at pressures below 10^-8 Torr, using Q-switched ruby-laser pulses with energy densities ranging from about 60 to 190 MW/cm².

Career Highlights

Gary W. Ownby has dedicated his career to advancing semiconductor technology. His innovative methods have the potential to improve the quality and efficiency of electronic components. He works for the United States of America as represented by the United States, contributing to research and development in this critical field.

Collaborations

Gary has collaborated with notable colleagues, including Clark W. White and David M. Zehner. Their combined expertise has furthered advancements in semiconductor processing and materials science.

Conclusion

Gary W. Ownby is a distinguished inventor whose work in laser irradiation methods has the potential to revolutionize the production of atomically clean surfaces in semiconductor technology. His contributions are significant in enhancing the performance of electronic devices.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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