Gary P Mosculak

Title: Gary P Mosculak: Innovator in Non-Volatile Memory Technology

Introduction

Gary P Mosculak is a notable inventor based in Colorado Springs, CO (US). He has made significant contributions to the field of non-volatile memory technology. His innovative approach has led to the development of a unique method for erasing memory cells in electronic devices.

Latest Patents

Gary holds a patent for "High voltage architecture for non-volatile memory." This patent describes a method of erasing a non-volatile memory (NVM) cell during an erase operation. The process involves applying a first high voltage (HV) signal to a common source line (CSL) that is shared among NVM cells within a sector. The HV signal is above the highest voltage of a power supply, and it is also applied to a local bit line (BL) during the erasing process. This innovative method enhances the efficiency and reliability of memory devices.

Career Highlights

Gary is currently employed at Cypress Semiconductor Corporation, where he continues to work on advancing memory technology. His expertise in high voltage architecture has positioned him as a key player in the development of cutting-edge memory solutions.

Collaborations

Throughout his career, Gary has collaborated with talented professionals in the field, including Bogdan I Georgescu and Vijay Raghavan. These collaborations have fostered innovation and contributed to the success of various projects.

Conclusion

Gary P Mosculak's contributions to non-volatile memory technology exemplify the impact of innovative thinking in the electronics industry. His patent and ongoing work at Cypress Semiconductor Corporation highlight his commitment to advancing technology.