New Braunfels, TX, United States of America

Gary M Pelletier

This inventor holds 2 USPTO granted patents and 1 published patent application. Top assignee: Berry Global, Inc.. Active years: 2025.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Gary M Pelletier. Retrieved from https://idiyas.com/inventor/gary-m-pelletier

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 2 

% Patents Active = 100.0

Average Co-Inventor Count = 3.0

ph-index = 1

Forward Citations = 1(Granted Patents)


Company Filing History:


Years Active: 2025

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2 patents (USPTO):Explore Patents

Title: Gary M Pelletier: Innovator in Surface Pattern Technology

Introduction

Gary M Pelletier is a notable inventor based in New Braunfels, TX (US). He has made significant contributions to the field of surface pattern technology, holding a total of 2 patents. His work is characterized by innovation and a commitment to advancing materials science.

Latest Patents

Among his latest patents is a unique film with a surface pattern. This invention showcases his ability to blend functionality with aesthetic appeal, making it a valuable addition to the industry.

Career Highlights

Gary is currently employed at Berry Global, Inc., where he continues to develop innovative solutions. His role at the company allows him to apply his expertise in creating advanced materials that meet the needs of various applications.

Collaborations

Throughout his career, Gary has collaborated with talented individuals such as Casey J Hurney and Elizabeth A Curran. These partnerships have fostered a creative environment that encourages the exchange of ideas and enhances the innovation process.

Conclusion

In summary, Gary M Pelletier is a distinguished inventor whose work in surface pattern technology has made a significant impact. His contributions to Berry Global, Inc. and his collaborations with fellow innovators highlight his dedication to advancing the field.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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