This inventor holds 2 USPTO granted patents and 1 published patent application. Top assignee: Rca Inc.. Active years: 1987.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile
Company Filing History:
Years Active: 1987
Title: Innovations of Gary M Dolny
Introduction
Gary M Dolny is an accomplished inventor based in Middletown Township, PA (US). He has made significant contributions to the field of semiconductor technology, particularly in the development of vertical power MOS devices. With a total of 2 patents to his name, Dolny's work has had a notable impact on the industry.
Latest Patents
Dolny's latest patents include a "Method for fabricating bidirectional vertical power MOS device." This invention describes a vertical MOSFET in a silicon wafer that features opposing major surfaces. It includes a source electrode on one surface and a drain electrode on the second surface, with an internally disposed insulated gate. The silicon between the insulated gate and each major surface is of first conductivity type, while the silicon laterally adjacent to the insulated gate is of second conductivity type. A predetermined voltage on the insulated gate creates an inversion channel that extends a predetermined distance into the laterally adjacent silicon. The invention also details the doping characteristics of the silicon, ensuring optimal performance and efficiency.
Another patent, titled "Bidirectional vertical power MOS device and fabrication method," shares similar features and innovations. It emphasizes the importance of the lightly doped voltage-supporting region and the low density of interface states at the interface between the insulated gate and the laterally adjacent silicon. These advancements contribute to the overall effectiveness of the device in various applications.
Career Highlights
Gary M Dolny is currently associated with RCA Inc., where he continues to innovate and develop new technologies. His expertise in semiconductor devices has positioned him as a key figure in his field.
Collaborations
Dolny has collaborated with notable professionals, including Lawrence A Goodman, to further enhance his research and development efforts.
Conclusion
Gary M Dolny's contributions to the field of semiconductor technology through his patents and collaborations highlight his role as a significant inventor. His work continues to influence advancements in vertical power MOS devices, showcasing the importance of innovation in technology.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile