The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 20, 1987
Filed:
Oct. 30, 1986
Gary M Dolny, Middletown Township, Bucks County, PA (US);
Lawrence A Goodman, Plainsboro, NJ (US);
RCA Corporation, Princeton, NJ (US);
Abstract
A vertical MOSFET in a silicon wafer having opposing major surfaces includes a source electrode on one surface, a drain electrode on the second surface, and an internally disposed insulated gate. The silicon between the insulated gate and each of the major surfaces is of first conductivity type and the silicon that is laterally adjacent to the insulated gate is of second conductivity type, such that a predetermined voltage on the insulated gate creates an inversion channel extending a predetermined distance into the laterally adjacent silicon. That portion of the laterally adjacent silicon where the inversion channel is formed is of relatively lightly doped material, whereas other areas of the laterally adjacent silicon is relatively heavily doped. The silicon that is between the insulated gate and each wafer surface includes a relatively lightly doped voltage-supporting region contiguous with the insulated gate and the laterally adjacent silicon and a relatively heavily doped region between this voltage-supporting region and the surface. Additionally, the interface between the insulated gate and the laterally adjacent silicon has a low density of interface states.