Cupertino, CA, United States of America

Gary Lennen

This inventor holds 1 USPTO granted patent and 1 published patent application. Top assignee: Samsung Electronics Ltd.. Active years: 2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Gary Lennen. Retrieved from https://idiyas.com/inventor/gary-lennen

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank
USPTO Granted Patents = 1 

Average Co-Inventor Count = 1.0

ph-index = 1


Company Filing History:


Years Active: 2026

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1 patent (USPTO):Explore Patents

Title: Gary Lennen and Frequency-Drift Correction

Introduction

Gary Lennen is an inventor associated with Cupertino, California, and Samsung Electronics Ltd. His patent work addresses frequency-drift correction, a technique for helping manage signal changes related to crystal temperature.

Latest Patents

Lennen is associated with 1 patent, titled “Systems and Methods for Frequency-Drift Correction.” The patent describes a system in which a sample-correction interface circuit receives a digitized signal and information associated with crystal temperature. The circuit generates an uncorrected sample and crystal-drift data based on the signal and temperature information, then sends at least one of these outputs to memory.

Career Highlights

Lennen’s documented patent contribution focuses on signal processing and crystal-drift data. The disclosed method connects temperature information with correction-related data generated from a digitized signal.

Collaborations

The listed coworkers associated with Lennen include Jie Wu and Sigang Qiu. The available information does not specify their roles in the patent or their working relationship with him.

Conclusion

Gary Lennen’s patent record highlights work on frequency-drift correction, combining digitized signal processing with crystal-temperature information.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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