Ipswich, United Kingdom

Gareth W Ashwell

This inventor holds 3 USPTO granted patents. Top assignees: British Telecommunications Public Limited Company, British Telecommunications Corporation. Active years: 1988-1992.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Gareth W Ashwell. Retrieved from https://idiyas.com/inventor/gareth-w-ashwell

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

Average Co-Inventor Count = 1.2

ph-index = 3

Forward Citations = 17(Granted Patents)


Company Filing History:


Years Active: 1988-1992

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3 patents (USPTO):Explore Patents

Title: Gareth W Ashwell: Innovator in Arsenosilicate Glass Technologies

Introduction

Gareth W Ashwell is a notable inventor based in Ipswich, GB. He has made significant contributions to the field of semiconductor technology and optical waveguides. With a total of 3 patents to his name, Ashwell's work focuses on the innovative use of arsenosilicate glass in various applications.

Latest Patents

One of Ashwell's latest patents is titled "Low temperature interlayer dielectric of arsenosilicate glass." This patent describes the use of arsenosilicate glass (ASG) as a dielectric layer in semiconductors, along with methods for producing ASG as conformal coatings. The ASG coatings can be created through heterogeneous reactions involving silane, arsine, and oxygen. In multilevel semiconductors, ASG can be utilized over polysilicon gates, aluminum metallization, and second dielectric layers.

Another significant patent is related to the "Fabrication of optical waveguide." In this patent, the guiding layers of optical waveguides are formed from arsenosilicate glass. By adjusting the arsenic content from 2 to 13 mole percent, the refractive index can be varied between 1.45 and 1.53. Pure silica or less heavily doped ASG can be employed for the cladding layers. The ASG is preferably produced through a heterogeneous reaction between silane and oxygen in the presence of arsine, which can occur at temperatures as low as 390°C, making it suitable for use on substrates of III-V compounds.

Career Highlights

Throughout his career, Gareth W Ashwell has worked with prominent organizations, including British Telecommunications Public Limited Company and British Telecommunications Corporation. His experience in these companies has contributed to his expertise in the field of semiconductor technologies.

Collaborations

One of Ashwell's notable collaborators is Benjamin J Ainslie. Their partnership has likely fostered innovative ideas and advancements in their respective fields.

Conclusion

Gareth W Ashwell is a distinguished inventor whose work with arsenosilicate glass has paved the way for advancements in semiconductor and optical technologies. His contributions continue to influence the industry and inspire future innovations.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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