Gareth Roy

Title: Innovations of Gareth Roy in Semiconductor Technology

Introduction

Gareth Roy is a notable inventor based in Glasgow, GB, recognized for his contributions to semiconductor technology. He holds three patents that focus on the manufacturing processes of variation resistant metal-oxide-semiconductor field effect transistors (MOSFETs). His innovative approaches have significantly advanced the field of electronics.

Latest Patents

Gareth Roy's latest patents include a method of manufacturing variation resistant MOSFETs. This process utilizes a high-K, metal-gate 'channel-last' technique. A cavity is formed between spacers over a well area with separate drain and source areas. An ion implant step through the cavity leads to a localized increase in well-doping beneath the cavity. The implant is activated by a microsecond annealing, minimizing dopant diffusion. Within the cavity, a recess into the well area is created, where an active region is formed using an un-doped or lightly doped epitaxial layer. A high-K dielectric stack is then established over this layer, followed by the formation of a metal gate within the cavity boundaries. In one embodiment, a cap of poly-silicon or amorphous silicon is added on top of the metal gate.

Career Highlights

Throughout his career, Gareth Roy has worked with several companies, including Semiwise Limited and Gold Standard Simulations Ltd. His experience in these organizations has contributed to his expertise in semiconductor manufacturing processes.

Collaborations

Gareth has collaborated with Asen Asenov, a fellow innovator in the field. Their partnership has likely fostered advancements in semiconductor technology.

Conclusion

Gareth Roy's innovative work in the field of semiconductor technology, particularly in the development of variation resistant MOSFETs, showcases his significant contributions to the industry. His patents reflect a deep understanding of manufacturing processes that enhance the performance and reliability of electronic devices.