Company Filing History:
Years Active: 2015
Title: Innovations of Gao-qing Li in Semiconductor Technology.
Introduction
Gao-qing Li is a prominent inventor based in Beijing, China. He has made significant contributions to the field of semiconductor technology, particularly in the development of advanced bipolar transistors. With a total of 2 patents, his work addresses critical challenges in the industry.
Latest Patents
Gao-qing Li's latest patents include the "Metal silicide self-aligned SiGe heterojunction bipolar transistor and method of forming the same." This invention aims to overcome the limitations of prior art products, particularly the large base resistance. The design features an Si collector region, a local dielectric region, a base region, and a low-resistance metal silicide layer, among other components. The method of forming this bipolar transistor emphasizes simplicity and cost-effectiveness while reducing base resistance.
Another notable patent is the "Bipolar transistor with embedded epitaxial external base region and method of forming the same." This invention addresses the TED effect found in previous structures. It includes a collector region, a base region, and an external base region that is embedded in the collector region. The method of forming this transistor also highlights concise steps and improved device performance.
Career Highlights
Gao-qing Li is affiliated with Tsinghua University, a leading research institution in China. His work at the university has allowed him to explore innovative solutions in semiconductor technology. His research has garnered attention for its practical applications and contributions to the field.
Collaborations
Gao-qing Li has collaborated with notable colleagues, including Jun Fu and Yu-dong Wang. These partnerships have facilitated the exchange of ideas and advancements in their respective research areas.
Conclusion
Gao-qing Li's contributions to semiconductor technology through his innovative patents demonstrate his expertise and commitment to advancing the field. His work continues to influence the development of efficient and high-performance electronic devices.
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