This inventor holds 1 USPTO granted patent and 1 published patent application. Top assignee: Nuvoton Technology Corporation Japan. Active years: 2025.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile
Company Filing History:
Years Active: 2025
Title: Gaku Nishikawa - Innovator in Nitride-Based Semiconductor Technology.
Introduction
Gaku Nishikawa is an inventor based in Tottori-shi, Japan. He is known for his work in the field of semiconductor technology, particularly focusing on nitride-based materials. Although he currently holds no granted patents, his contributions to the field are noteworthy.
Latest Patent Applications
Nishikawa's latest patent application is titled "NITRIDE-BASED SEMICONDUCTOR LASER DEVICE AND METHOD OF MANUFACTURING THE SAME." This application describes a nitride-based semiconductor laser device that includes a nitride-based semiconductor layer formed on an active layer made of a nitride-based semiconductor. The device features an electrode layer that consists of a first metal layer made of platinum (Pt), a second metal layer made of palladium (Pd), and a third metal layer also made of platinum (Pt). The design of the third metal layer is crucial, as its thickness is specified to be at least 10 times and not more than 30 times that of the first metal layer.
Conclusion
Gaku Nishikawa's innovative approach to semiconductor technology highlights the potential of nitride-based materials in advancing laser device applications. His ongoing research and patent applications may pave the way for future developments in this critical field.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile