The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 28, 2025

Filed:

Nov. 29, 2021
Applicant:

Nuvoton Technology Corporation Japan, Kyoto, JP;

Inventors:

Keimei Masamoto, Niigata, JP;

Mitsuaki Oya, Tokyo, JP;

Shigeo Hayashi, Kyoto, JP;

Masanori Hiroki, Shiga, JP;

Masahiro Kume, Toyama, JP;

Gaku Nishikawa, Toyama, JP;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H10H 20/831 (2025.01); H10H 20/832 (2025.01);
U.S. Cl.
CPC ...
H10H 20/831 (2025.01); H10H 20/832 (2025.01);
Abstract

A semiconductor light-emitting element includes: a semiconductor layer; an electrode disposed on the semiconductor layer, the electrode including a power feeding portion and an extension portion extending from the power feeding portion. The power feeding portion has a width greater than a width of the extension portion. The electrode includes an electrode layer and a wiring layer. The electrode layer includes a first metal layer disposed in the power feeding portion, and a second metal layer disposed closer to an extension portion side than the first metal layer is and directly connected to the first metal layer. The first metal layer and the second metal layer are in ohmic contact with the semiconductor layer. The first metal layer has an electrical conductivity higher than an electrical conductivity of the second metal layer. The wiring layer is continuously disposed on the first metal layer and the second metal layer.


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