This inventor holds 1 USPTO granted patent and 1 published patent application. Top assignee: International Business Machines Corporation. Active years: 2026.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile
Company Filing History:
Years Active: 2026
Title: Gabriel Rodriguez and His MRAM Device Patent.
Introduction
Gabriel Rodriguez is an inventor associated with Albany, New York, and International Business Machines Corporation. His listed patent concerns the design of electrodes in a magnetic random-access memory (MRAM) device.
Latest Patents
Rodriguez is credited with 1 patent: “MRAM Device with Hexagonal Shaped Electrodes.” The patent describes a semiconductor device containing a magnetic tunnel junction (MTJ) stack with an electrode that has a hexagonal cross-sectional profile. It also describes a bottom electrode whose width is greater at its middle section than at its upper and lower surfaces.
Career Highlights
The patent reflects work on semiconductor-device structures and electrode geometry for MTJ-based memory technology. Rodriguez is associated with International Business Machines Corporation, also known as IBM.
Collaborations
The listed coworkers associated with Rodriguez include Oscar Van Der Straten and Chih-Chao Yang.
Conclusion
Gabriel Rodriguez’s recorded patent highlights a specialized electrode design for MRAM devices and his association with IBM.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile