Ga-Ram Park

This inventor holds 9 USPTO granted patents. Top assignees: Skhynix Inc., Sk Hynik Inc.. Active years: 2015-2017.

USPTO Granted Patents = 9

% Patents Active = 100.0

Average Co-Inventor Count = 1.5

ph-index = 2

Forward Citations = 17(Granted Patents)

Company Filing History:

Years Active: 2015-2017

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9 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 9728269 - Semiconductor memory device for performing repair operations based on repair information stored therein (2017-08-08),

2. 9514840 - Semiconductor memory device and method for operating the same (2016-12-06),

3. 9472259 - Semiconductor memory device with dummy memory mat and refresh operating method thereof (2016-10-18),

4. 9437330 - Memory device and memory system include hard repair mode and soft repair mode (2016-09-06),

5. 9437329 - Semiconductor device with initialization operation and boot-up operation (2016-09-06),

6. 9374096 - Semiconductor apparatus and semiconductor system including the same, and method of operating the same (2016-06-21),

7. 9362008 - Memory device using soft and hard repair operations and memory system including the same (2016-06-07),

8. 9191010 - Semiconductor device and semiconductor system including the same (2015-11-17),

9. 9190128 - Semiconductor device (2015-11-17),

Title: Ga-Ram Park: Innovator in Semiconductor Memory Technologies

Introduction: Ga-Ram Park, an accomplished inventor based in Gyeonggi-do, South Korea, has made significant contributions to the field of semiconductor memory devices. With a remarkable portfolio of 9 patents to his name, Park has focused on enhancing the functionality and efficiency of memory technologies.

Latest Patents: Among his noteworthy inventions, two of his latest patents stand out due to their innovative approaches in semiconductor memory devices. The first patent outlines a semiconductor memory device designed to perform repair operations based on stored repair information. This technology features a memory array region comprising normal cells and redundancy cells, alongside a repair fuse block capable of programming repair addresses as repair information. The device is controlled by a repair control block that generates signals to activate redundant paths between failed cells and their corresponding redundancy cells.

The second patent presents a similar semiconductor memory device that incorporates a dual fuse set for operations in different modes. This design enables programming of available fuses based on a repair control signal, allowing for enhanced flexibility in memory operations.

Career Highlights: Ga-Ram Park has spent much of his career at prominent organizations in the semiconductor industry, including SK Hynix Inc. His experiences in these companies have shaped his innovative approach to memory technology. His work has consistently contributed to improvements in efficiency and performance within the field.

Collaborations: Throughout his career, Park has collaborated with notable colleagues such as Jae-Il Kim and Jong-Yeol Yang. These collaborations have fostered creativity and advancement in developing cutting-edge semiconductor technologies.

Conclusion: Ga-Ram Park's innovations in semiconductor memory devices underscore the importance of continual development in the tech industry. His patents reflect ongoing advancements aimed at refining memory operations, thus paving the way for future innovations in semiconductor technologies. His contributions mark significant progress in the field, highlighting his role as a key inventor in semiconductor memory systems.