Fuquan Wang

Title: Fuquan Wang: Innovator in Memory Technology

Introduction

Fuquan Wang is a prominent inventor based in Beijing, China. He has made significant contributions to the field of memory technology, holding a total of 4 patents. His work focuses on enhancing the efficiency and functionality of dynamic random access memory (DRAM) systems.

Latest Patents

Wang's latest patents include a dynamic random access memory refresh circuit and refresh method, as well as a proof-of-work chip. The DRAM refresh circuit features a row address recording unit that records accessed rows within the current refresh cycle. It also includes a refresh driving unit that performs refresh operations and a refresh control unit that triggers the refresh of rows not accessed during the current cycle. Additionally, he has developed a method and circuit for accessing the write data path of an on-chip storage control unit, which streamlines the process of transmitting write addresses and data to multiple storage control units.

Career Highlights

Throughout his career, Fuquan Wang has worked with notable companies such as Sunlune Pte. Ltd. and Capitalbio Corporation. His experience in these organizations has allowed him to refine his skills and contribute to innovative projects in the technology sector.

Collaborations

Wang has collaborated with talented individuals in his field, including Yusheng Zhang and Kai Cai. These partnerships have fostered a creative environment that encourages the development of groundbreaking technologies.

Conclusion

Fuquan Wang's contributions to memory technology and his innovative patents highlight his role as a leading inventor in the industry. His work continues to influence advancements in DRAM systems and on-chip storage solutions.