Tokyo, Japan

Fumitoshi Toyokawa

This inventor holds 3 USPTO granted patents. Top assignee: Nec Corporation. Active years: 1988-1995.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Fumitoshi Toyokawa. Retrieved from https://idiyas.com/inventor/fumitoshi-toyokawa

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

Average Co-Inventor Count = 1.8

ph-index = 3

Forward Citations = 60(Granted Patents)


Company Filing History:


Years Active: 1988-1995

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3 patents (USPTO):Explore Patents

Title: Fumitoshi Toyokawa: Innovator in Silicon Substrate Manufacturing

Introduction

Fumitoshi Toyokawa is a prominent inventor based in Tokyo, Japan. He has made significant contributions to the field of semiconductor manufacturing, particularly in the development of methods for producing high-quality silicon substrates. With a total of 3 patents to his name, Toyokawa's work has had a notable impact on the industry.

Latest Patents

One of Toyokawa's latest patents is a method of manufacturing a silicon single crystal substrate. This innovative method involves depositing polycrystalline silicon on a coarsely polished silicon single crystal substrate. The process includes mirror surface finish polishing one substrate surface and conducting a high-temperature thermal treatment. This thermal treatment is crucial as it facilitates the diffusion of interstitial oxygen from the substrate surface and aids in the contraction and vanishing of oxygen precipitation nuclei within the substrate.

Another significant patent is a chemical vapor deposition apparatus designed to obtain high-quality epitaxial layers. This apparatus features a reaction tube and a substrate-holder that can hold multiple substrates in a vertical orientation. The design includes rotating means for the substrate-holder and heating means for the substrates. The apparatus also incorporates two gas-supply nozzle tubes, each with a vertical gas-emission line, ensuring efficient gas distribution during the deposition process.

Career Highlights

Fumitoshi Toyokawa is currently employed at NEC Corporation, where he continues to innovate in the field of semiconductor technology. His work at NEC has allowed him to collaborate with other talented professionals in the industry, further enhancing his contributions to the field.

Collaborations

Some of Toyokawa's notable coworkers include Masao Mikami and Kazumi Takemura. Their collaborative efforts have played a significant role in advancing the research and development of semiconductor technologies.

Conclusion

Fumitoshi Toyokawa's innovative work in silicon substrate manufacturing and chemical vapor deposition has established him as a key figure in the semiconductor industry. His patents reflect a commitment to advancing technology and improving manufacturing processes.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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