This inventor holds 1 USPTO granted patent. Top assignees: Novel Crystal Technology, Inc., Tamura Corporation. Active years: 2026.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile
Company Filing History:
1 out of 22 
1 out of 196 
Years Active: 2026
Title: Fumio Otsuka: Inventor of a Schottky Barrier Diode
Introduction
Fumio Otsuka is an inventor associated with Sayama, Japan. His work includes a patented Schottky barrier diode, and his record lists 1 patent.
Latest Patents
Otsuka’s patent describes a Schottky barrier diode built around a wide-bandgap semiconductor layer. A trench in the layer defines a mesa, while a high-resistance region containing an impurity of the opposite conductivity type lies beneath the trench. An insulating film or opposite-type semiconductor film covers at least the trench’s bottom surface. The anode electrode connects to the mesa through this film, and a cathode electrode is placed on the opposite surface of the semiconductor layer.
Career Highlights
Otsuka’s professional affiliations include Tamura Corporation and Novel Crystal Technology, Inc. His patented diode design addresses semiconductor device structure and electrode arrangement.
Collaborations
His listed company affiliations provide context for his work in the semiconductor industry. The available information does not specify particular collaborators or joint projects.
Conclusion
Fumio Otsuka’s patent documents a Schottky barrier diode design using a wide-bandgap semiconductor and a trench-based structure, reflecting his contributions to semiconductor technology.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile