Fumihiko Satoh

Title: Fumihiko Satoh: Innovator in MOSFET Technology

Introduction

Fumihiko Satoh is a notable inventor based in Shiga, Japan. He has made significant contributions to the field of semiconductor technology, particularly in the development of MOSFET devices. His innovative approach has led to advancements that enhance the performance and efficiency of electronic components.

Latest Patents

Fumihiko Satoh holds a patent for a MOSFET with a self-aligned channel edge implant and method. This invention involves forming the MOSFET device by selectively doping bordering channel regions. The method ensures that the threshold, or turn-on, voltage is equalized across the channel. The device structure features a self-aligned channel edge implant region, which equalizes threshold voltages in the channel edge region with those in the channel interior region. This innovation effectively eliminates sub-threshold leakage current in low voltage applications, making it a valuable advancement in the industry. He has 1 patent to his name.

Career Highlights

Fumihiko Satoh is associated with International Business Machines Corporation, commonly known as IBM. His work at IBM has allowed him to collaborate with leading experts in the field and contribute to groundbreaking technologies.

Collaborations

One of his notable coworkers is John W Golz. Their collaboration has likely fostered innovative ideas and solutions in semiconductor technology.

Conclusion

Fumihiko Satoh's contributions to MOSFET technology exemplify the impact of innovative thinking in the semiconductor industry. His patent reflects a commitment to enhancing electronic device performance, and his work continues to influence advancements in this critical field.