Tokyo, Japan

Fumie Ogihara

This inventor holds 1 USPTO granted patent. Top assignee: Nec Corporation. Active years: 2002.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Fumie Ogihara. Retrieved from https://idiyas.com/inventor/fumie-ogihara

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


Average Co-Inventor Count = 5.0

ph-index = 1

Forward Citations = 4(Granted Patents)


Company Filing History:


Years Active: 2002

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1 patent (USPTO):Explore Patents

Title: Fumie Ogihara: Innovator in Semiconductor Technology

Introduction

Fumie Ogihara is a prominent inventor based in Tokyo, Japan. She has made significant contributions to the field of semiconductor technology. Her innovative work has led to the development of a unique method for producing semiconductor devices.

Latest Patents

Fumie Ogihara holds 1 patent for her invention titled "Method of producing a semiconductor device." This method is applicable to multilayer wafers for leadless chip carrier packages. The process begins with forming a generally V-shaped groove in one major surface of the wafer, aligned with a weak, cleaving portion on the opposite surface. A cleaving force is then applied to create a break in the cleaving portion, allowing the wafer to break from the groove toward the cleaving portion.

Career Highlights

Fumie Ogihara is currently employed at NEC Corporation, where she continues to advance her research and development in semiconductor technology. Her work has been instrumental in enhancing the efficiency and effectiveness of semiconductor devices.

Collaborations

Fumie collaborates with notable colleagues, including Seiji Ichikawa and Tatsuo Tokue. Their combined expertise contributes to the innovative projects at NEC Corporation.

Conclusion

Fumie Ogihara's contributions to semiconductor technology exemplify her dedication to innovation. Her patented method showcases her ability to solve complex challenges in the industry.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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