Company Filing History:
Years Active: 2025
Title: Fu-Xing Zhou: Innovator in Memory Device Technology
Introduction
Fu-Xing Zhou is a notable inventor based in New Taipei, Taiwan. He has made significant contributions to the field of integrated circuit technology, particularly in memory devices. His innovative work has led to the development of a unique patent that enhances the functionality of memory devices.
Latest Patents
Fu-Xing Zhou holds a patent for a memory device with a source line over a bonding pad. This integrated circuit structure includes a substrate, a conductive layer, a plurality of memory devices, a bonding pad, and a source line. The conductive layer is positioned over the substrate, while the memory devices are stacked vertically above the conductive layer. The bonding pad is also situated over the conductive layer. The source line extends upwardly from the bonding pad, featuring a lower portion inlaid within the bonding pad and an upper portion that has a sidewall coterminous with the sidewall of the bonding pad. Notably, the top end of the source line has a first lateral dimension that is greater than the second lateral dimension of the bonding pad. This innovative design improves the efficiency and performance of memory devices.
Career Highlights
Fu-Xing Zhou is currently employed at Macronix International Co., Ltd., where he continues to advance his research and development efforts in memory technology. His work at Macronix has positioned him as a key player in the industry, contributing to the company's reputation for innovation.
Collaborations
Fu-Xing Zhou collaborates with Li-Wei Wang, a fellow innovator in the field. Their partnership exemplifies the spirit of teamwork and shared knowledge that drives technological advancements.
Conclusion
Fu-Xing Zhou's contributions to memory device technology through his patent and work at Macronix International Co., Ltd. highlight his role as a significant inventor in the field. His innovative designs continue to influence the development of integrated circuits and memory devices.