Quanzhou, China

Fu-Che Lee

This inventor holds 1 USPTO granted patent. Top assignee: Fujian Jinhua Integrated Circuit Co., Ltd.. Active years: 2025.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Fu-Che Lee. Retrieved from https://idiyas.com/inventor/fu-che-lee-j6mmhf1r

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

Average Co-Inventor Count = 6.0

ph-index = 1


Company Filing History:


Years Active: 2025

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1 patent (USPTO):Explore Patents

Title: Fu-Che Lee: Innovator in Semiconductor Technology

Introduction

Fu-Che Lee is a prominent inventor based in Quanzhou, China. He has made significant contributions to the field of semiconductor technology. His innovative work has led to the development of a unique semiconductor structure that enhances performance and reliability.

Latest Patents

Fu-Che Lee holds a patent for a semiconductor structure and method for forming the same. This patent describes a semiconductor structure that includes a substrate, a first dielectric layer, a second dielectric layer, and an opening that extends through these layers. The structure also features a conductive layer, a contact structure, and a passivation layer, all designed to improve the functionality of semiconductor devices.

Career Highlights

Fu-Che Lee is associated with Fujian Jinhua Integrated Circuit Co., Ltd., where he applies his expertise in semiconductor technology. His work at this company has positioned him as a key player in advancing integrated circuit design and manufacturing.

Collaborations

Fu-Che Lee has collaborated with notable colleagues such as Yi-Wang Jhan and Gang-Yi Lin. These partnerships have fostered innovation and contributed to the success of various projects within the semiconductor industry.

Conclusion

Fu-Che Lee's contributions to semiconductor technology exemplify the importance of innovation in modern electronics. His patent and work at Fujian Jinhua Integrated Circuit Co., Ltd. highlight his role as a leading inventor in this critical field.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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