Fsien-Fu Meng

Title: The Innovative Contributions of Fsien-Fu Meng

Introduction

Fsien-Fu Meng is a notable inventor based in Taipei, Taiwan. He has made significant contributions to the field of semiconductor technology. His work primarily focuses on methods that enhance the manufacturing processes of semiconductor devices.

Latest Patents

One of his key patents is titled "Method for forming a polysilicon spacer with a vertical profile." This innovative method involves several steps, including the deposition of a dielectric layer and a sacrificial layer over a polysilicon layer. The process utilizes chemical mechanical polishing (CMP) to achieve a planarized surface. Subsequently, parts of the polysilicon layer are removed to allow insulating structures to protrude. After the sacrificial layer is removed, a second oxide layer is formed on the exposed polysilicon surface, followed by dry etching to create a polysilicon spacer with a vertical profile. This patent showcases his expertise in semiconductor fabrication techniques.

Career Highlights

Fsien-Fu Meng is currently employed at Vanguard International Semiconductor Corporation, where he continues to innovate in the semiconductor industry. His work has contributed to advancements in the efficiency and effectiveness of semiconductor manufacturing processes.

Collaborations

Throughout his career, he has collaborated with talented individuals such as Chyei-Jer Hsieh and Yu-Chen Ho. These collaborations have further enriched his work and contributed to the development of innovative solutions in the field.

Conclusion

Fsien-Fu Meng's contributions to semiconductor technology, particularly through his patented methods, highlight his role as a significant inventor in the industry. His work continues to influence advancements in semiconductor manufacturing processes.