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For the Inventor, By the Inventor

Suhr, Switzerland

Friedhelm Bauer

This inventor holds 7 USPTO granted patents. Top assignees: Asea Brown Boveri Ag, Abb Management Ag. Active years: 1995-1998.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Friedhelm Bauer. Retrieved from https://idiyas.com/inventor/friedhelm-bauer-vlisi811

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 7

% Patents Active = 100.0

Average Co-Inventor Count = 1.4

ph-index = 5

Forward Citations = 37(Granted Patents)


Location History:

  • Ittigen, CH (1996 - 1997)
  • Suhr, CH (1995 - 1998)

Company Filing History:

goldMedal5 out of 410 
 
Asea Brown Boveri Ag
 patents
silverMedal2 out of 104 
 
Abb Management Ag
 patents

Years Active: 1995-1998

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7 patents (USPTO):Explore Patents
1. 5710445 - Gate turn-off thyristor for high blocking voltage and small component (1998-01-20),
2. 5668385 - Power semiconductor component with transparent emitter and stop layer (1997-09-16),
3. 5661315 - Controllable power semiconductor component (1997-08-26),
4. 5619047 - Semiconductor diode in which electrons are injected into a reverse (1997-04-08),
5. 5616938 - MOS-controlled power semiconductor component for high voltages (1997-04-01),
6. 5491351 - Gate turn-off thyristor (1996-02-13),
7. 5414290 - IGBT with self-aligning cathode pattern and method for producing it (1995-05-09),

Title: The Innovative Journey of Friedhelm Bauer

Introduction

Friedhelm Bauer is a prominent inventor based in Suhr, Switzerland, known for his significant contributions to the field of power semiconductor technology. With a portfolio of seven patents, he has made remarkable strides in innovations that optimize performance and efficiency in electronic components.

Latest Patents

Among his latest patents, Friedhelm has developed a gate turn-off thyristor engineered for high blocking voltage and compact design. This innovative component features a transparent anode emitter and strategically placed anode short-circuits, allowing for high switching frequencies without increased switching losses. Another notable invention is his power semiconductor component that achieves a substantial reduction in the thickness of the semiconductor substrate while enhancing switching performance. This component integrates a transparent emitter and a stop layer, making it suitable for use in various semiconductor switches, including IGBT, MCT, and GTO.

Career Highlights

Friedhelm has had a distinguished career, collaborating with renowned companies in the electrical engineering sector, including Asea Brown Boveri Ltd. and ABB Management AG. His work has consistently focused on improving the efficiency and operability of semiconductor devices, positioning him as a key figure in this engineering domain.

Collaborations

Throughout his career, Friedhelm has collaborated with esteemed professionals in his field, including colleagues such as Klas Lilja and Peter Streit. These collaborations have enabled him to exchange ideas and drive forward innovative solutions in semiconductor technology.

Conclusion

Friedhelm Bauer's contributions to the world of power electronics through his inventions and patents highlight his innovative spirit and dedication to advancing technology. His work continues to influence the industry, setting new standards for efficiency and performance in semiconductor devices.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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