Location History:
- Ittigen, CH (1996 - 1997)
- Suhr, CH (1995 - 1998)
Company Filing History:
Years Active: 1995-1998
Title: The Innovative Journey of Friedhelm Bauer
Introduction
Friedhelm Bauer is a prominent inventor based in Suhr, Switzerland, known for his significant contributions to the field of power semiconductor technology. With a portfolio of seven patents, he has made remarkable strides in innovations that optimize performance and efficiency in electronic components.
Latest Patents
Among his latest patents, Friedhelm has developed a gate turn-off thyristor engineered for high blocking voltage and compact design. This innovative component features a transparent anode emitter and strategically placed anode short-circuits, allowing for high switching frequencies without increased switching losses. Another notable invention is his power semiconductor component that achieves a substantial reduction in the thickness of the semiconductor substrate while enhancing switching performance. This component integrates a transparent emitter and a stop layer, making it suitable for use in various semiconductor switches, including IGBT, MCT, and GTO.
Career Highlights
Friedhelm has had a distinguished career, collaborating with renowned companies in the electrical engineering sector, including Asea Brown Boveri Ltd. and ABB Management AG. His work has consistently focused on improving the efficiency and operability of semiconductor devices, positioning him as a key figure in this engineering domain.
Collaborations
Throughout his career, Friedhelm has collaborated with esteemed professionals in his field, including colleagues such as Klas Lilja and Peter Streit. These collaborations have enabled him to exchange ideas and drive forward innovative solutions in semiconductor technology.
Conclusion
Friedhelm Bauer's contributions to the world of power electronics through his inventions and patents highlight his innovative spirit and dedication to advancing technology. His work continues to influence the industry, setting new standards for efficiency and performance in semiconductor devices.