This inventor holds 2 USPTO granted patents. Top assignee: Hewlett-Packard Development Company, L.p.. Active years: 2003-2005.
Company Filing History:
Years Active: 2003-2005
Title: Fred Perner: Innovator in MRAM Technology
Introduction
Fred Perner is a notable inventor based in Palo Alto, California. He has made significant contributions to the field of magnetic random access memory (MRAM) technology. With a total of 2 patents, his work has advanced the capabilities of memory storage solutions.
Latest Patents
Fred Perner's latest patents include a method of forming a shared global word line MRAM structure. This method involves etching a trench in an oxide layer over a substrate, depositing a first liner material, and anisotropically etching it to create a precise structure. Additionally, he has developed an apparatus that provides a shared global word line MRAM structure, which includes various components such as bit line conductors and memory cells that are magnetically coupled. These innovations enhance the efficiency and functionality of MRAM devices.
Career Highlights
Fred Perner is currently employed at Hewlett-Packard Development Company, L.P. His work at this esteemed organization has allowed him to collaborate with other talented professionals in the field.
Collaborations
One of his notable coworkers is Heon Lee, with whom he has likely shared insights and expertise in MRAM technology.
Conclusion
Fred Perner's contributions to MRAM technology through his patents and work at Hewlett-Packard Development Company, L.P. highlight his role as an influential inventor in the tech industry. His innovations continue to shape the future of memory storage solutions.