Company Filing History:
Years Active: 2014
Title: The Innovative Contributions of Françcois Leverd
Introduction
Françcois Leverd is a notable inventor based in Saint Ismier, France. He has made significant contributions to the field of microelectronics, particularly through his innovative patent. His work is characterized by a focus on enhancing the efficiency and effectiveness of semiconductor manufacturing processes.
Latest Patents
Françcois Leverd holds a patent titled "Method for forming a deep trench in a microelectronic component substrate." This patent describes a process for creating a trench in a semiconductor substrate. The method involves depositing an etch mask on the substrate, etching the trench through the mask's opening, and doping the trench walls. The etching process consists of two phases: the first phase uses a higher etch power to etch the substrate, while the second phase employs a lower power to refine the trench. The doping of the trench walls is conducted through the etch mask opening, showcasing a novel approach to semiconductor fabrication.
Career Highlights
Françcois Leverd is currently employed at STMicroelectronics (Crolles 2) SAS, where he continues to develop innovative solutions in microelectronics. His expertise and dedication to advancing technology have made him a valuable asset to his team and the industry.
Collaborations
Françcois collaborates with his coworker, Arnaud Tournier, to further enhance their research and development efforts. Their combined expertise contributes to the innovative projects at STMicroelectronics.
Conclusion
Françcois Leverd's contributions to the field of microelectronics through his patent and work at STMicroelectronics highlight his role as an influential inventor. His innovative methods are paving the way for advancements in semiconductor technology.