Stmicroelectronics (crolles 2) Sas

Françcois Leverd

Arnaud Tournier

A trench is formed in a semiconductor substrate by depositing an etch mask on the substrate having an opening, etching of the trench through the opening, and doping the walls of the trench. The etching step includes a first phase having an etch power set to etch the substrate under the etch mask, and a second phase having an etch power set smaller than the power of the first phase. Further, the doping of the walls of the trench is applied through the opening of the etch mask.

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Saint Ismier, France

Françcois Leverd