Franz Zängl

Title: Franz Zängl: Innovator in MOS Transistor Technology

Introduction

Franz Zängl is a notable inventor based in Munich, Germany. He has made significant contributions to the field of semiconductor technology, particularly in the development of MOS transistors. With a total of 2 patents to his name, Zängl's work has had a considerable impact on the industry.

Latest Patents

Zängl's latest patents include innovations related to MOS transistors and ESD protective devices. One of his patents describes a MOS transistor that features a drain zone, a source zone, and a gate electrode. This invention involves the implantation of doping atoms of the first conductivity type in the drain and source zones through multiple implantation steps. This process allows for the vertical shifting of a pn junction between the drain zone and the substrate region, enabling the setting of a voltage ratio between the lateral breakdown voltage and the vertical breakdown voltage. Another patent focuses on the method for producing a MOS transistor with similar features, emphasizing the importance of precise doping techniques.

Career Highlights

Franz Zängl is currently associated with Infineon Technologies AG, a leading company in semiconductor solutions. His work at Infineon has allowed him to push the boundaries of technology and contribute to advancements in electronic components.

Collaborations

Zängl has collaborated with notable colleagues such as Kai Esmark and Harald Gossner. These partnerships have fostered innovation and have been instrumental in the development of new technologies in the semiconductor field.

Conclusion

Franz Zängl's contributions to MOS transistor technology exemplify his dedication to innovation in the semiconductor industry. His patents reflect a deep understanding of electronic components and their applications. Through his work at Infineon Technologies AG, Zängl continues to influence the future of technology.