The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 26, 2005
Filed:
Oct. 02, 2002
Kai Esmark, München, DE;
Harald Gossner, Riemerling, DE;
Gunther Mackh, Tegernheim, DE;
Richard Owen, Regensburg, DE;
Franz Zängl, München, DE;
Kai Esmark, München, DE;
Harald Gossner, Riemerling, DE;
Gunther Mackh, Tegernheim, DE;
Richard Owen, Regensburg, DE;
Franz Zängl, München, DE;
Infineon Technologies AG, Munich, DE;
Abstract
A MOS transistor includes a drain zone, a source zone, and a gate electrode. Doping atoms of the first conductivity type are implanted in the region of the drain zone and the source zone by at least two further implantation steps such that a pn junction between the drain zone and a substrate region is vertically shifted and a voltage ratio of the MOS transistor between a lateral breakdown voltage and a vertical breakdown voltage can be set.