Company Filing History:
Years Active: 2003
Title: Franz Hoffmann: Innovator in DRAM Cell Technology
Introduction
Franz Hoffmann is a notable inventor based in München, Germany. He has made significant contributions to the field of semiconductor technology, particularly in the development of DRAM cell systems. His innovative approach has led to advancements that enhance the efficiency and performance of memory cells.
Latest Patents
Hoffmann holds a patent for a "DRAM cell system and method for producing same." This patent describes a DRAM cell arrangement and the method for fabricating it. The design features word lines and bit lines arranged above a main area of a substrate, resulting in a planar construction that can be produced alongside gate electrodes of transistors in the periphery of the cell arrangement. The patent outlines a unique structure where a depression of the substrate is provided for each memory cell, with a storage node of a storage capacitor located in the lower region of the depression and a gate electrode of a vertical transistor positioned in the upper region. The arrangement of depressions between trenches filled with isolating structures allows for efficient space utilization, with alignment tolerances that accommodate a space requirement for the memory cell amounting to 4F.
Career Highlights
Franz Hoffmann is currently associated with Infineon Technologies AG, a leading company in semiconductor solutions. His work at Infineon has been pivotal in advancing memory technology, contributing to the company's reputation for innovation in the industry.
Collaborations
Hoffmann has collaborated with notable colleagues such as Josef Willer and Till Schlößer. Their combined expertise has fostered a collaborative environment that encourages innovation and the development of cutting-edge technologies.
Conclusion
Franz Hoffmann's contributions to DRAM cell technology exemplify his commitment to innovation in the semiconductor field. His patent and work at Infineon Technologies AG highlight his role as a key player in advancing memory technology.