Frankfurt-am-Main, Germany

Frank Vater


Average Co-Inventor Count = 4.0

ph-index = 1


Company Filing History:


Years Active: 2022

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1 patent (USPTO):Explore Patents

Title: Frank Vater - Innovator in Memory Technology

Introduction

Frank Vater is a notable inventor based in Frankfurt-am-Main, Germany. He has made significant contributions to the field of microelectronics, particularly in memory technology. His innovative approach has led to the development of a unique patent that addresses critical challenges in data storage and retrieval.

Latest Patents

Frank Vater holds a patent for a self-correcting modular-redundancy-memory device. This invention is designed to enhance the reliability of memory systems by incorporating three bistable-memory elements and a majority voter. The bistable-memory elements are configured to respond to binary data signals, clock signals, and feedback signals, ensuring accurate data processing. The majority voter plays a crucial role in determining the feedback signal based on the output signals from the bistable-memory elements, thereby improving the overall performance of the memory device.

Career Highlights

Frank Vater is associated with Ihp GmbH—Innovations for High Performance Microelectronics, which is part of the Leibniz-Institut für Innovative Mikroelektronik. His work at this institution has allowed him to collaborate with leading experts in the field and contribute to groundbreaking research in microelectronics. His dedication to innovation has positioned him as a key figure in the development of advanced memory technologies.

Collaborations

Frank Vater has worked alongside talented colleagues such as Oliver Schrape and Anselm Breitenreiter. Their collaborative efforts have fostered an environment of creativity and innovation, leading to significant advancements in the field of microelectronics.

Conclusion

Frank Vater's contributions to memory technology through his innovative patent demonstrate his commitment to advancing the field of microelectronics. His work continues to influence the development of reliable and efficient memory systems.

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