Frank Qian

Title: Frank Qian: Innovator in Flash Memory Technology

Introduction

Frank Qian is a notable inventor based in Campbell, California. He has made significant contributions to the field of semiconductor technology, particularly in flash memory cell fabrication. His innovative approach has led to advancements that enhance the efficiency and density of memory cells.

Latest Patents

Frank Qian holds a patent for a unique flash memory cell fabrication sequence. This patent describes a method where an abrupt drain junction and a graded source junction are created using a common diffusion step. The process involves the presence of an oxide spacer over a gate stack, which facilitates faster source diffusion and results in a graded source junction. Meanwhile, the slower diffusion in the drain region leads to an abrupt drain junction. This innovative technique allows for greater cell densities by positioning the drain junction further away from the gate stack.

Career Highlights

Frank Qian is currently employed at Hynix Semiconductor America, Inc., where he continues to work on cutting-edge semiconductor technologies. His expertise in flash memory fabrication has positioned him as a key player in the industry.

Collaborations

Some of Frank Qian's coworkers include Hsingya Arthur Wang and Peter Rabkin, who collaborate with him on various projects within the semiconductor field.

Conclusion

Frank Qian's contributions to flash memory technology exemplify the innovative spirit of modern inventors. His work not only advances the field but also paves the way for future developments in semiconductor technology.