The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 21, 2003
Filed:
May. 11, 2001
Hsingya Arthur Wang, San Jose, CA (US);
Peter Rabkin, Cupertino, CA (US);
Frank Qian, Campbell, CA (US);
Hynix Semiconductor America, Inc., San Jose, CA (US);
Abstract
An abrupt drain junction and a graded source junction are fabricated using a common diffusion step, wherein the common diffusion step is used to create both the drain junction-and the source junction. The common diffusion step is accomplished while an oxide spacer is present over a gate stack, prior to the common diffusion step, resulting in faster source diffusion and a graded source junction, while the slower diffusion in the drain region results in an abrupt drain junction. The oxide spacer moves the drain junction further away from the gate stack to allow for greater cell densities.