Frank Goodwin

Title: Frank Goodwin: Innovator in EUVL Process Structure Fabrication

Introduction

Frank Goodwin is a notable inventor based in Halfmoon, NY (US). He has made significant contributions to the field of extreme ultra-violet lithography (EUVL) through his innovative patent. His work focuses on methods for fabricating process structures, which are essential in the semiconductor manufacturing industry.

Latest Patents

Frank Goodwin holds a patent for EUVL process structure fabrication methods. This patent outlines methods for fabricating a process structure, such as a mask or mask blank. The methods include providing a silicon substrate, forming a multi-layer EUVL structure over the silicon substrate, reducing the thickness of the silicon substrate, and attaching a low-thermal-expansion material (LTEM) substrate to the multi-layer EUVL structure or the reduced silicon substrate. The silicon substrate is typically a silicon wafer with a defect-free surface, upon which the multi-layer EUVL structure is formed. This structure may include multiple bi-layers of different materials, a capping layer, and an optional absorber layer, which is patternable to facilitate the formation of a EUVL mask.

Career Highlights

Throughout his career, Frank Goodwin has worked with prominent companies in the semiconductor industry, including Sematech, Inc. and Intel Corporation. His experience in these organizations has allowed him to develop and refine his expertise in EUVL technologies.

Collaborations

Frank has collaborated with notable professionals in his field, including Vibhu Jindal and Patrick A Kearney. These collaborations have contributed to advancements in EUVL process structures and have further established his reputation as an innovator.

Conclusion

Frank Goodwin's contributions to the field of EUVL process structure fabrication highlight his role as a significant inventor in the semiconductor industry. His innovative methods and collaborations have paved the way for advancements in lithography technologies.