Vincennes, France

Francois Chevoir

This inventor holds 1 USPTO granted patent. Top assignee: Thomson-Csf. Active years: 1994.


% Patents Active = 100.0

Average Co-Inventor Count = 3.0

ph-index = 1

Forward Citations = 10(Granted Patents)


Company Filing History:


Years Active: 1994

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1 patent (USPTO):Explore Patents

Title: The Innovations of Francois Chevoir

Introduction

Francois Chevoir is a notable inventor based in Vincennes, France. He has made significant contributions to the field of electromagnetic wave detection. His innovative work has led to the development of a unique patent that showcases his expertise in semiconductor technology.

Latest Patents

Francois Chevoir holds a patent for an Asymmetric Quantum Well Infrared Detector. This advanced electromagnetic wave detector consists of several stacks of layers of semiconducting materials. Each stack forms an asymmetrical quantum well with a stepped barrier, featuring two energy levels. One energy level is positioned beneath the energy level of the intermediate barrier step, while the other is situated above it. The design incorporates means to apply an electric field to the structure, enhancing its functionality.

Career Highlights

Francois Chevoir has had a distinguished career, working with Thomson-CSF, a prominent company in the field of electronics and defense. His work has been instrumental in advancing technologies related to infrared detection and semiconductor materials. His innovative approach has garnered attention within the scientific community.

Collaborations

Francois has collaborated with several talented individuals, including Dominique Delacourt and Michel Papuchon. These partnerships have contributed to the success of his projects and the advancement of technology in their respective fields.

Conclusion

Francois Chevoir's contributions to the field of electromagnetic wave detection through his patent for the Asymmetric Quantum Well Infrared Detector highlight his innovative spirit and technical expertise. His work continues to influence advancements in semiconductor technology.

Profile summary based on public USPTO records.
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