Francis Yong Wee Poh

Title: Innovations of Francis Yong Wee Poh

Introduction

Francis Yong Wee Poh is a notable inventor based in Singapore, recognized for his contributions to the field of integrated magnetic random access memory (MRAM). With a total of two patents to his name, he has made significant advancements in memory technology.

Latest Patents

His latest patents focus on integrated magnetic random access memory with logic devices that utilize low-K interconnects. The disclosed methods involve providing a substrate and a first upper dielectric layer over various regions of the substrate. This layer includes a first upper interconnect level with multiple metal lines. A MRAM cell, which consists of a magnetic tunnel junction (MTJ) element sandwiched between top and bottom electrodes, is formed in one of the regions. The bottom electrode is directly connected to the metal line in the first upper interconnect level. Additionally, a dielectric layer is provided, which includes a second upper interconnect level featuring dual damascene interconnects. These interconnects are coupled to the metal lines and the MTJ element, enhancing the device's functionality.

Career Highlights

Francis Yong Wee Poh is currently employed at Globalfoundries Singapore Pte. Ltd., where he continues to innovate in the field of semiconductor technology. His work has contributed to the advancement of memory devices, making them more efficient and effective.

Collaborations

He collaborates with talented coworkers, including Danny Pak-Chum Shum and Juan Boon Tan, who share his passion for innovation and technology.

Conclusion

Francis Yong Wee Poh's contributions to the field of integrated magnetic random access memory highlight his role as a significant inventor in the technology sector. His work continues to influence advancements in memory technology, showcasing the importance of innovation in this field.