Sargans, Switzerland

François Leblanc

This inventor holds 1 USPTO granted patent. Top assignee: Balzers Aktiengesellschaft. Active years: 2003.

IDiyas Innovation Intelligence. (2026). Inventor Profile: François Leblanc. Retrieved from https://idiyas.com/inventor/franandccedilois-leblanc

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

Average Co-Inventor Count = 4.0

ph-index = 1


Company Filing History:


Years Active: 2003

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1 patent (USPTO):Explore Patents

Title: The Innovations of François Leblanc

Introduction

François Leblanc is an accomplished inventor based in Sargans, Switzerland. He has made significant contributions to the field of technology, particularly in the development of field emissive devices. His innovative approach and expertise have led to the creation of a unique patent that showcases his skills and knowledge.

Latest Patents

François holds a patent for a ballast layer for a field emissive device. This invention includes a very thin layer of strongly doped nanocrystalline silicon and one or more moderately doped layers of an amorphous silicon-based material. This advancement is crucial for enhancing the performance and efficiency of field emissive devices.

Career Highlights

François is currently employed at Balzers Aktiengesellschaft, a company known for its cutting-edge technology and innovative solutions. His work at Balzers has allowed him to further develop his ideas and contribute to the company's success in the industry.

Collaborations

Throughout his career, François has collaborated with talented individuals such as Emmanuel Turlot and Hanh Pham. These partnerships have fostered a creative environment that encourages innovation and the sharing of ideas.

Conclusion

François Leblanc is a notable inventor whose work in the field of field emissive devices has made a significant impact. His patent and collaborations reflect his dedication to advancing technology and innovation.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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