Forrest Grant Sedgwick, Iv

Title: Innovations by Forrest Grant Sedgwick, Iv

Introduction

Forrest Grant Sedgwick, Iv is an accomplished inventor based in Berkeley, CA. He has made significant contributions to the field of nanotechnology, particularly in the development of advanced photodetectors and solar cells. His innovative work focuses on the growth of nanostructures that can enhance the performance of optoelectronic devices.

Latest Patents

Forrest holds a patent for "Nanoneedle plasmonic photodetectors and solar cells." This patent describes a method for catalyst-free growth of defect-free Gallium Arsenide (GaAs)-based nanoneedles on silicon substrates. The growth occurs at a complementary metal-oxide-semiconductor (CMOS)-compatible temperature of around 400°C. Each nanoneedle features a sharp tip measuring 2 to 5 nanometers, a base width of 600 nanometers, and a length of 4 micrometers. The nanoneedles exhibit a hexagonal needle-like structure with a tapered shape, making them suitable for integration with optoelectronic devices on silicon substrates. An example application presented in the patent is a nanoneedle avalanche photodiode (APD) that achieves a high current gain of 265 with only an 8V bias.

Career Highlights

Forrest is affiliated with the University of California, where he continues to advance research in nanotechnology and optoelectronics. His work has garnered attention for its potential applications in various fields, including renewable energy and advanced electronics.

Collaborations

Forrest has collaborated with notable colleagues such as Chih-Wei Chuang and Connie J Chang-Hasnain. Their joint efforts have contributed to the advancement of research in nanostructures and their applications.

Conclusion

Forrest Grant Sedgwick, Iv is a pioneering inventor whose work in nanotechnology is paving the way for innovative solutions in optoelectronic devices. His contributions are significant in the ongoing development of advanced materials and technologies.