Sant Cugat del Vallès, Spain

Ferran Alex Paris

This inventor holds 2 USPTO granted patents. Top assignee: Hewlett-Packard Development Company, L.p.. Active years: 2021-2022.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Ferran Alex Paris. Retrieved from https://idiyas.com/inventor/ferran-alex-paris

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

Average Co-Inventor Count = 3.0

ph-index = 1

Forward Citations = 2(Granted Patents)


Company Filing History:


Years Active: 2021-2022

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2 patents (USPTO):Explore Patents

Title: Ferran Alex Paris: Innovator in Large Format Printing

Introduction

Ferran Alex Paris is a notable inventor based in Sant Cugat del Vallès, Spain. He has made significant contributions to the field of printing technology, particularly through his work on large format printers. With a total of two patents to his name, Ferran has established himself as a key figure in the industry.

Latest Patents

Ferran's latest patents focus on advancements in large format printing technology. These innovations aim to enhance the efficiency and quality of printing processes, making them more accessible for various applications.

Career Highlights

Ferran Alex Paris is currently employed at Hewlett-Packard Development Company, L.P. His role at this leading technology company allows him to work on cutting-edge projects that push the boundaries of printing technology. His expertise and dedication have contributed to the company's reputation for innovation.

Collaborations

Ferran has collaborated with talented individuals such as Javier Alfonso Cesar and Ferran Rafat Esquius. These partnerships have fostered a creative environment that encourages the development of new ideas and solutions in the printing sector.

Conclusion

Ferran Alex Paris is a distinguished inventor whose work in large format printing continues to impact the industry positively. His patents and collaborations reflect his commitment to innovation and excellence in technology.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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