Budapest, Hungary

Ferenc Toth

This inventor holds 2 USPTO granted patents. Top assignee: Magyar Tudomanyos Akademia Muszaki Fizikai Kutato Intezete. Active years: 1984-1986.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Ferenc Toth. Retrieved from https://idiyas.com/inventor/ferenc-toth-ml2q2vgf

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

Average Co-Inventor Count = 5.5

ph-index = 2

Forward Citations = 13(Granted Patents)


Company Filing History:


Years Active: 1984-1986

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2 patents (USPTO):Explore Patents

Title: Ferenc Toth: Innovator in Semiconductor Analysis

Introduction

Ferenc Toth is a notable inventor based in Budapest, Hungary, recognized for his significant contributions to the field of semiconductor technology. With two patents to his name, Toth has been actively involved in advancing methods that enhance the understanding of charged energy states in semiconductor and insulator materials.

Latest Patents

Toth's most recent patents focus on two innovative methodologies related to deep level transient spectroscopy (DLTS). The first patent details a method for determining charged energy states of semiconductor materials. This method involves exciting the sample using periodic pulses to alter its initial charge state and then detecting the transient response as the sample returns to thermodynamic balance. The apparatus for implementing this method is also included in the patent.

The second patent outlines a DLTS method where a continuous high-frequency measuring signal is applied to a semiconductor junction. The technique generates exciting pulses that are introduced through fast semiconductor switches, enabling the junction to be biased in both forward and reverse directions. This method allows for enhanced analysis of the junction by evaluating the high-frequency signal through a lock-in amplifier, thereby improving the accuracy and efficiency of measurements.

Career Highlights

Toth is affiliated with the Research Institute for Technical Physics and Materials Science under the Hungarian Academy of Sciences. His work there reflects a dedication to the advancement of scientific knowledge in physical research. His innovative methods are essential for researchers seeking to understand complex semiconductor behavior, contributing greatly to both academic and industrial applications.

Collaborations

Throughout his career, Toth has collaborated with distinguished colleagues, including Gyorgy Ferenczi and Peter Horvath. These collaborations have not only fostered a rich exchange of innovative ideas but have also significantly contributed to the research outputs that enhance the understanding of semiconductor technologies.

Conclusion

Ferenc Toth's inventions in the field of semiconductor analysis are testament to his expertise and commitment to innovation. His patents provide vital methodologies that will undoubtedly aid in furthering research and applications in semiconductor physics, thereby reinforcing his status as a valuable contributor to this scientific domain.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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