Feng Zhao

Title: Innovations of Feng Zhao in Semiconductor Technology

Introduction

Feng Zhao is a notable inventor based in Columbia, SC (US), recognized for his contributions to semiconductor technology. He has developed innovative solutions that enhance the performance of diodes, particularly in the realm of Schottky barrier diodes.

Latest Patents

Feng Zhao holds a patent for a Schottky barrier diode (SBD) and its off-shoot, the merged PN/Schottky diode or junction barrier Schottky (JBS) diode. This invention features a substrate of a first conductivity type with a grid of doped wells of the second conductivity type embedded within it. A Schottky barrier metal layer creates a contact with the substrate's surface above the grid. Selected embedded wells in the grid establish a Schottky barrier contact to the metal layer, while the majority do not. This design effectively reduces the diode's forward voltage drop for the same area while providing reverse blocking benefits akin to a conventional JBS structure.

Career Highlights

Feng Zhao is currently employed at Microsemi Corporation, where he continues to innovate in the field of semiconductor devices. His work has significantly impacted the efficiency and functionality of diodes used in various applications.

Collaborations

Feng has collaborated with notable colleagues, including Bruce Odekirk and Dumitru Sdrulla, contributing to advancements in semiconductor technology.

Conclusion

Feng Zhao's innovative work in developing the merged PN/Schottky diode exemplifies his commitment to enhancing semiconductor technology. His contributions continue to influence the industry positively.