This inventor holds 1 USPTO granted patent. Top assignee: International Business Machines Corporation. Active years: 2003.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile
Company Filing History:
Years Active: 2003
Title: Innovations of Feng Yi Huang
Introduction
Feng Yi Huang is a notable inventor based in Hacienda Heights, California. He has made significant contributions to the field of semiconductor technology, particularly in the development of bipolar transistors integrated with CMOS circuits.
Latest Patents
Huang holds a patent for a "Bipolar transistor with raised extrinsic base fabricated in an integrated BiCMOS circuit." This innovative process involves forming a bipolar transistor with a raised extrinsic base, an emitter, and a collector that are integrated with a CMOS circuit featuring a gate. The method includes providing an intermediate semiconductor structure that encompasses both CMOS and bipolar areas, ensuring efficient functionality.
Career Highlights
Huang is currently employed at International Business Machines Corporation (IBM), where he continues to advance his research and development efforts in semiconductor technologies. His work has been instrumental in enhancing the performance and integration of electronic components.
Collaborations
Huang has collaborated with esteemed colleagues such as David C Ahlgren and Gregory Gower Freeman, contributing to various projects that push the boundaries of technology.
Conclusion
Feng Yi Huang's innovative work in semiconductor technology exemplifies the impact of dedicated inventors in the field. His contributions continue to shape the future of electronic devices and systems.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile