Feng Qiao

Title: Innovations by Feng Qiao in Semiconductor Processing

Introduction

Feng Qiao is a notable inventor based in Santa Clara, CA (US). He has made significant contributions to the field of semiconductor processing, particularly in the area of etching high aspect ratio structures. His innovative methods have the potential to enhance the efficiency and effectiveness of semiconductor manufacturing.

Latest Patents

Feng Qiao holds a patent titled "Method for etching high aspect ratio structures." This patent describes a method and system for etching high aspect ratio structures in a semiconducting processing chamber. The method involves etching a substrate to form a recess, depositing a passivation layer on the sidewalls of the recess, treating the passivation layer, and etching the recess to a second depth. The process ensures minimal variation in the recess sidewall width while effectively removing clogging materials formed from etch byproducts.

Career Highlights

Feng Qiao is associated with Applied Materials, Inc., a leading company in the semiconductor industry. His work at Applied Materials has allowed him to contribute to advancements in semiconductor technology, particularly in etching techniques that are crucial for modern electronic devices.

Conclusion

Feng Qiao's innovative methods in semiconductor processing exemplify the importance of advancements in technology. His contributions are paving the way for more efficient manufacturing processes in the semiconductor industry.