The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 04, 2025
Filed:
Mar. 30, 2023
Applied Materials, Inc., Santa Clara, CA (US);
Feng Qiao, Santa Clara, CA (US);
Hailong Zhou, Santa Clara, CA (US);
Qian Fu, Santa Clara, CA (US);
Sangjun Park, Santa Clara, CA (US);
Jayoung Choi, Santa Clara, CA (US);
Radhe Agarwal, Santa Clara, CA (US);
Tong Liu, Santa Clara, CA (US);
Applied Materials, Inc., Santa Clara, CA (US);
Abstract
A method and system for etching high aspect ratio structures in a semiconducting processing chamber are disclosed herein. In one example, a method of patterning a substrate comprises etching the substrate to form a recess, depositing a passivation layer on sidewalls of the recess, treating the passivation layer, and etching the recess to a second depth. The substrate etch forms a recess to a first depth, the substrate having a mask layer disposed thereon. The treating of the passivation layer is for removal of a clogging material formed from an etch byproduct on the mask layer. The etching the recess to a second depth while maintaining a minimum variation of a recess sidewall width.