Taipei, Taiwan

Feng-Hsun Mo

This inventor holds 1 USPTO granted patent. Top assignee: High Power Electronic Co., Ltd.. Active years: 2022.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Feng-Hsun Mo. Retrieved from https://idiyas.com/inventor/feng-hsun-mo

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank

% Patents Active = 100.0

Average Co-Inventor Count = 2.0

ph-index = 1


Company Filing History:


Years Active: 2022

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1 patent (USPTO):Explore Patents

Title: Innovations by Feng-Hsun Mo

Introduction

Feng-Hsun Mo is a notable inventor based in Taipei, Taiwan. He has made significant contributions to the field of power supply technology. His innovative approach has led to the development of a unique power supply unit that enhances efficiency and reduces power loss.

Latest Patents

Feng-Hsun Mo holds a patent for a "Power supply unit with some DC-DC converters located outside the enclosure and integrated into cable harness assembly." This invention incorporates the main DC voltage output rail within the enclosure of the power supply unit. Additionally, it positions some DC voltage output rails and DC-DC converters outside the enclosure, close to the system board and associated peripherals. This design negates voltage drop across the cable harness assembly, resulting in lower power loss and improved efficiency.

Career Highlights

Feng-Hsun Mo is associated with High Power Electronic Co., Ltd., where he has been instrumental in advancing power supply technologies. His work focuses on enhancing the performance and efficiency of electronic systems.

Collaborations

Feng-Hsun Mo collaborates with Chih-Ming Chen, contributing to innovative projects within the company.

Conclusion

Feng-Hsun Mo's contributions to power supply technology exemplify the impact of innovative thinking in engineering. His patent reflects a commitment to improving efficiency in electronic systems, showcasing the importance of innovation in the field.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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