Campbell, CA, United States of America

Feng Frank Qian

This inventor holds 2 USPTO granted patents. Top assignee: Hyundai Electronics America, Inc.. Active years: 2000-2001.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Feng Frank Qian. Retrieved from https://idiyas.com/inventor/feng-frank-qian

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank

% Patents Active = 100.0

Average Co-Inventor Count = 3.0

ph-index = 2

Forward Citations = 134(Granted Patents)


Company Filing History:


Years Active: 2000-2001

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2 patents (USPTO):Explore Patents

Title: Innovations of Feng Frank Qian in Flash Memory Technology

Introduction

Feng Frank Qian is a notable inventor based in Campbell, CA (US). He has made significant contributions to the field of flash memory technology, holding 2 patents that showcase his innovative approaches.

Latest Patents

One of his latest patents is titled "Self-convergence of post-erase threshold voltages in a flash memory cell using transient response." This invention provides a method for self-converging erase on a flash memory cell by rapidly switching a bias on a control gate while a lateral field is present in the channel region. The method involves differentially biasing the source and drain of the cell, allowing for a transient response at the floating gate. The net transient vertical field formed across a tunneling oxide facilitates moderate hot carrier injection between the channel region and the floating gate. This self-converging method ensures that carrier injection to the floating gate occurs only when a sufficient number of carriers are removed during the array step. The efficiency of this process minimizes the time required at the end of an erase pulse to achieve the desired response.

Another patent by Feng Frank Qian is also focused on the "Self-convergence of post-erase threshold voltages in a flash memory cell." This patent reiterates the innovative erase method that utilizes rapid bias switching on the control gate while maintaining a lateral field in the channel region. The approach emphasizes the importance of transient responses and the self-converging nature of the method, which enhances the performance of flash memory cells.

Career Highlights

Feng Frank Qian is currently employed at Hyundai Electronics America, Inc., where he continues to develop cutting-edge technologies in the field of electronics and memory solutions. His work has significantly impacted the efficiency and reliability of flash memory systems.

Collaborations

Feng has collaborated with notable colleagues, including Hsingya Arthur Wang and I-Chuin Peter Chan, contributing to advancements in their shared field of expertise.

Conclusion

Feng Frank Qian's innovative work in flash memory technology exemplifies the importance of continuous research and development in the electronics industry. His patents reflect a commitment to enhancing memory cell performance, which is crucial for modern computing applications.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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