Location History:
- Rochester Hills, MI (US) (2017)
- Rochester, MI (US) (2005 - 2021)
Company Filing History:
Years Active: 2005-2021
Title: The Innovative Contributions of Feng Dong
Introduction
Feng Dong is a prominent inventor based in Rochester, MI (US), known for his significant contributions to the field of friction materials. With a total of 13 patents to his name, he has made remarkable advancements that enhance the performance and durability of various applications.
Latest Patents
Feng Dong's latest patents include innovative designs for friction materials. One notable patent describes a friction material that comprises a base and a friction generating layer that penetrates into and is integral with the base. This design features a bonding surface on the base and a friction generating surface on the layer, which includes fibrillated nanofibers, friction adjusting particles, and elastomeric particles, all dispersed in a curable resin. Another patent outlines a friction material with two outermost surfaces, where the base forms part of the first surface. This material includes fibers and fillers in specific weight percentages, along with a deposit that contains a friction adjusting agent, arranged in a gradated pattern. The second outermost surface is designed to have a specific surface roughness, enhancing its functionality.
Career Highlights
Feng Dong is currently employed at BorgWarner Inc., where he continues to innovate and develop advanced friction materials. His work has significantly impacted the automotive industry, contributing to improved safety and performance in vehicle components.
Collaborations
Feng Dong collaborates with talented colleagues, including Robert C. Lam and Wanjun Liu, to further enhance the research and development of friction materials.
Conclusion
Feng Dong's innovative work in friction materials showcases his expertise and dedication to advancing technology in this field. His contributions are vital for the ongoing development of safer and more efficient automotive components.