Zurich, Switzerland

Felix Julian Schupp

USPTO Granted Patents = 2 

Average Co-Inventor Count = 4.4

ph-index = 1


Company Filing History:


Years Active: 2025

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2 patents (USPTO):Explore Patents

Title: Felix Julian Schupp: Innovator in Quantum and Semiconductor Devices

Introduction

Felix Julian Schupp is a notable inventor based in Zurich, Switzerland. He has made significant contributions to the field of quantum and semiconductor devices. His innovative work has led to the development of a unique patent that enhances the fabrication of gate structures.

Latest Patents

Felix Julian Schupp holds a patent titled "Self-aligned gate isolation for multi-directional gate layouts in quantum and semiconductor devices." This invention provides a method for fabricating a self-aligned gate structure. The process involves forming at least one first trench and one second trench in a gate structure that includes a first metallic gate layer. The first trench has a smaller width than the second trench. The method includes depositing a conformal dielectric layer that fills the first trench and partially fills the second trench, leaving a portion of the second trench unfilled. A conformal second metallic gate layer is then deposited, filling the unfilled portion of the second trench. Finally, portions of the second metallic gate layer are removed to expose the dielectric layer, resulting in self-aligned metallic gate electrodes.

Career Highlights

Felix Julian Schupp is associated with International Business Machines Corporation (IBM), where he continues to push the boundaries of technology. His work is instrumental in advancing the capabilities of quantum and semiconductor devices.

Collaborations

Felix has collaborated with notable colleagues such as Konstantinos Tsoukalas and Patrick Harvey-Collard. Their combined expertise contributes to the innovative projects at IBM.

Conclusion

Felix Julian Schupp is a prominent figure in the field of quantum and semiconductor technology, with a patent that showcases his innovative approach to gate structure fabrication. His contributions are paving the way for advancements in this critical area of technology.

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