International Business Machines Corporation

Felix Julian Schupp

Andreas Fuhrer Janett

Matthias Mergenthaler

Noelia Vico Trivino

Konstantinos Tsoukalas

Patrick Harvey-Collard

A qubit device or system having isolated bottom corner gates includes a semiconductor substrate and a semiconductor fin perpendicularly adjoining a top surface of the substrate. The qubit device also includes a first gate located at a first corner between a first side of the fin and the top surface of the substrate, and a second gate located at a second corner between a second, opposite side of the fin and the top surface of the substrate. The first and second gates are electrically isolated from each other and used to control a first quantum dot near the top of the fin. A third gate located at the first corner has a contact for accumulating a channel to facilitate charge transport to and from a second quantum dot located near the bottom of the fin accumulated using the first and second gates.

Isolated bottom corner gates for spin-qubits in a fin

One embodiment of the invention provides a method for fabricating a self-aligned gate structure comprising forming at least one first trench having a first width and at least one second trench having a second width in a gate structure comprising a first metallic gate layer. The first width is smaller than the second width. The method comprises depositing at least one conformal dielectric layer on the first metallic gate layer. The dielectric layer completely fills the first trench and partially fills the second trench, such that a portion of the second trench is unfilled. The method comprises depositing a conformal second metallic gate layer on the dielectric layer. The second metallic gate layer fills the unfilled portion of the second trench. The method comprises removing portions of the second metallic gate layer to expose the dielectric layer. Remaining portions of the second metallic gate layer include self-aligned metallic gate electrodes.

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Zurich, Switzerland

Felix Julian Schupp