Felix Holzmüller

Title: Felix Holzmüller: Innovator in Semiconductor Technology

Introduction

Felix Holzmüller is a prominent inventor based in Dresden, Germany. He has made significant contributions to the field of semiconductor technology, particularly in the development of field-effect transistors and extended-drain metal-oxide-semiconductor devices. With a total of two patents to his name, Holzmüller continues to push the boundaries of innovation in his field.

Latest Patents

Holzmüller's latest patents include "Structures for a field-effect transistor that include a spacer structure" and "Structures for an extended-drain metal-oxide-semiconductor device and methods of forming a structure for an extended-drain metal-oxide-semiconductor device." The first patent describes a structure that comprises a silicon-on-insulator substrate, a dielectric layer, and a gate electrode made of single-crystal semiconductor material. The second patent focuses on a semiconductor substrate containing a source region and a drain region, with a gate electrode positioned between them, showcasing a semiconductor layer that differs in composition from the substrate.

Career Highlights

Felix Holzmüller is currently employed at GlobalFoundries U.S. Inc., where he applies his expertise in semiconductor technology. His work has been instrumental in advancing the design and functionality of semiconductor devices, contributing to the overall progress in the industry.

Collaborations

Holzmüller has collaborated with notable colleagues such as Ruchil Kumar Jain and Dominik M Kleimaier. These collaborations have fostered a productive environment for innovation and development in semiconductor technologies.

Conclusion

Felix Holzmüller stands out as a key figure in the semiconductor industry, with his innovative patents and contributions to technology. His work continues to influence the future of semiconductor devices and their applications.