Cambridge, MA, United States of America

Felecia A Davis


Average Co-Inventor Count = 5.0

ph-index = 1

Forward Citations = 5(Granted Patents)


Company Filing History:


Years Active: 2015

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2 patents (USPTO):

Title: Felecia A. Davis: Innovator in Mood-Actuated Technology

Introduction

Felecia A. Davis is a prominent inventor based in Cambridge, MA (US). She has made significant contributions to the field of mood-actuated devices, holding 2 patents that showcase her innovative approach to technology. Her work focuses on creating devices that respond to the emotional states of users, enhancing user experience through emotional interaction.

Latest Patents

Davis's latest patents revolve around the concept of mood-actuated devices. The first patent describes techniques and apparatuses for implementing a mood-actuated device that receives mood information corresponding to a user's current mood. It determines the user's emotional state and controls the device to react accordingly. In some embodiments, the device includes a flexible material that changes shape based on the user's emotional state. The second patent also focuses on mood-actuated devices, detailing how indicators of a user's emotional state are sensed, allowing the device to react by moving in response to the user's feelings.

Career Highlights

Felecia A. Davis is currently associated with Microsoft Technology Licensing, LLC, where she continues to innovate and develop her ideas. Her work has garnered attention for its potential applications in various fields, including personal technology and emotional well-being.

Collaborations

Davis has collaborated with notable colleagues such as Asta Jane Roseway and Erin A. Carroll, contributing to a dynamic environment of creativity and innovation.

Conclusion

Felecia A. Davis stands out as an influential inventor in the realm of mood-actuated technology. Her patents reflect a deep understanding of the intersection between technology and human emotion, paving the way for future advancements in this exciting field.

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