Fei Xie

Title: Fei Xie: Innovator in Semiconductor Technology

Introduction

Fei Xie is a prominent inventor based in Sichuan, China. He has made significant contributions to the field of semiconductor technology, particularly in the area of MOS devices. With a total of 2 patents, his work has garnered attention for its innovative approaches and practical applications.

Latest Patents

One of Fei Xie's latest patents is titled "Multi-landing contact etching - A method for contacting MOS devices." This patent describes a sophisticated method for forming contacts in MOS devices. The process involves creating first openings in a photosensitive material over a substrate with a top dielectric in a first die area. Additionally, a second opening is formed over a gate stack in a second die area. The top dielectric layer is etched to create a semiconductor contact while also etching a portion of the hard mask layer thickness over a gate contact area. An inter-layer dielectric (ILD) is then deposited, and the photosensitive material is patterned to generate further openings. The ILD is etched to reopen the semiconductor contact, ensuring a reliable gate contact to the gate electrode.

Career Highlights

Fei Xie is currently employed at Texas Instruments Corporation, where he continues to push the boundaries of semiconductor technology. His work has been instrumental in developing methods that enhance the efficiency and effectiveness of MOS devices.

Collaborations

Fei has collaborated with notable colleagues, including Wen Cheng Tien and Ya Ping Chen. Their combined expertise has contributed to the advancement of innovative solutions in the semiconductor industry.

Conclusion

Fei Xie's contributions to semiconductor technology, particularly through his patents, highlight his role as a key innovator in the field. His work at Texas Instruments Corporation and collaborations with esteemed colleagues further emphasize his impact on the industry.